Author:Dr. Munira Raja
Co-authors:Naser Sedghi, Simon Higgins, Bill Eccleston
Abstract/Description: High-K dielectric materials are now considered as alternative gate dielectrics to silicon diode (SiO2) mainly due to their high value of dielectric constant K. The high K value can reduce the threshold voltage and the supply voltage thus resulting in lower power consumption. The switching speed of a transistor can also be increased as a result.
Poster presented at:MRS
Website link:http://www.liv.ac.uk/eee/research/me/me.htm